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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 2.1 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1402 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V -65 o C to 150o C 4A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 75 TYP 40 WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, Vds = 50.0 V, F = 400 MHz Idq = 0.2 A, Vds = 50.0 V, F = 400 MHz Idq = 0.2 A, Vds = 50.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 1.6 0.7 9.6 90 4.4 40 MIN 125 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 50.0 V, Vds = 0 V, Ids = 0.2 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 A Vgs = 20V, Vds = 10V Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 2/9/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1402 POUT VS PIN GRAPH F1402 POUT VS PIN F=400MHZ, VDS=50V, Idq=.4A 45 40 35 30 25 20 15.00 1000 CAPACITANCE VS VOLTAGE F1E 2 DIE CAPACITANCE 14.00 Pout 13.00 12.00 11.00 10.00 100 Ciss Gain 15 Efficiency = 43% 10 5 0 0 1 2 3 4 5 PIN IN WATTS 6 7 8 9 POUT Coss 10 9.00 8.00 7.00 6.00 10 GAIN Crss 1 0 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS IV CURVE F1E 2 DIE IV 8 7 6 ID IN AMPS 5 4 3 2 1 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 V SINV L S D OT Vg=6v vg=8v 14 0 16 18 vg=12v 20 ID AND GM VS VGS F1E 2 DIE ID & GM Vs VG 10.00 Id in amps; Gm in mhos Id 1.00 gM 0.10 0.01 0 2 4 6 8 10 12 14 16 18 Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 2/9/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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